Fe-N薄膜の生成に及ぼすバイアス効果

抄録

Fe-N thin films were prepared on crystallized glass and MgO (100) single-crystal substrate at room temperature by RF sputtering with an RF bias ranging from 0 W to 75 W at a deposition rate of between 0.5Å/s and 0.8Å/s. The X-ray diffraction peaks of γ'-Fe₄N decreased with increasing RF bias. In Fe-N thin films prepared on crystallized glass, an α''-Fe₁₆N₂ phase and α'-martensite phase were not formed, and the saturation magnetization M_s of the films did not exceed that of bulk α-Fe. In the Fe-N thin films prepared on MgO (100) single-crystal substrate with RF biases of 20 W and 25 W, α'-martensite phase were formed. The M_s for an RF bias of 20 W was 227 emu/g, which was 4.1% higher than that of bulk α-Fe.