Properties of III-V Based Ferromagnetic Semiconductor (Ga_1-xMn_x)As: As Pressure Dependence

抄録

Growth condition dependence of electronic, magnetic and optical characteristics of magnetic semiconductor (GaMn)As is studied. With decreasing the As₄ overpressure during the growth of (GaMn)As, the conduction behavior became more metallic, the ferromagnetic transition temperature became higher, and the magneto-optical response got strong. Besides, photoluminescence was obtained from the (GaMn)As samples grown under low As₄ overpressure.