Magnetotransport Properties of (Ga, Mn)As/GaAs/(Ga, Mn)As Trilayer Structures

抄録

All-semiconductor ferromagnet/nonmagnet/ferromagnet trilayer structures using (Ga, Mn)As as a ferromagnetic layer and GaAs a nonmagnetic layer were prepared and their magnetotransport properties were investigated. The results show that the interaction between the two (Ga, Mn)As layers decreases as the GaAs thickness increases. This shows that the carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers in the present all-semiconductor system.