日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
論文
Fe/MgO/MgF2/Co 接合のトンネル磁気抵抗効果
森山 貴広三谷 誠司高梨 弘毅
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ジャーナル オープンアクセス

2002 年 26 巻 4 号 p. 405-409

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Ferromagnetic tunnel junctions (MTJs) in which a thin MgO seed layer was inserted between Fe bottom electrode and MgF2 insulating barrier were fabricated through the use of molecular beam epitaxy. The structure and tunnel magnetoresistance (TMR) were investigated for Fe (200Å)/MgO (5Å)/MgF2 (20Å)/Co (200Å) junctions. RHEED observation suggested that an MgF2 layer deposited at room temperature was in amorphous or nanocrystalline state. The TMR ratio observed for a typical MTJ with barrier height of 1.6 eV was 1.8 % at 4.2 K and decreased with increasing temperature, down to 0.7 % at 293 K. It was found that the bias dependence of TMR shows a strong asymmetric feature, in contrast to conventional MTJs with amorphous alumina barriers.

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© 2002 (社)日本応用磁気学会
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