強磁性／反強磁性結合を用いた高周波キャリア型薄膜磁界センサ

抄録

This paper discusses a ferro/antiferro exchange coupled, high-frequency carrier-type, thin-film magnetic field sensor which can obtain an asymmetrical applied field dependence of the impedance of the sensor element due to the unidirectional anisotropy. We fabricated a sensor element that consisted of 200-nm-thick NiFe and 30-nm-thick FeMn films. We verified that the NiFe/FeMn bilayer structure was necessary for an asymmetrical high-sensitivity output. An exchange-coupling field of 145 A/m and an asymmetrical impedance change were obtained.