Journal of the Magnetics Society of Japan
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
Contributed Paper
Effect of Zn/Te Flux Ratio on Magnetic Properties of II-VI Diluted Magnetic Semiconductor Zn1-xCrxTe
S. Yamagata, H. Saito, K. Ando, K. Shinagawa
Author information
Keywords: diluted magnetic semiconductor, ferromagnetism, molecular beam epitaxy, Zn/Te flux ratio, magnetic circular dichroism
JOURNAL OPEN ACCESS

2004 Volume 28 Issue 2 Pages 145-148

Details
Download PDF (307K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
We investigated the effect of Zn/Te flux ratio on magnetic properties of a II-VI diluted magnetic semiconductor (DMS) Zn1-xCrxTe. Zn1-xCrxTe films were grown on GaAs(001) using a molecular beam epitaxy method and changing the Zn/Te flux ratio. In all the films, single phase of DMS Zn1-xCrxTe was confirmed using magnetic circular dichroism measurements. We found that ferromagnetism appears in a limited range of the Zn/Te flux ratio. The magnetic properties of DMS Zn1-xCrxTe depend sensitively on not only the Cr concentration but also the Zn/Te flux ratio.
Content from these authors
© 2004 by The Magnetics Society of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Successor

Journal of the Magnetics Society of Japan

Share this page
feedback
 Top