日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
薄膜
Ruをキャップ層にしたNi-Fe薄膜の磁気特性
拜山 沙徳克長永 隆志黒岩 丈晴古川 泰助小林 浩大森 達夫
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ジャーナル オープンアクセス

2005 年 29 巻 4 号 p. 459-462

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Magnetic properties of Ni-Fe ultra thin films with a Ru capping layer were investigated for application to magnetic random access memory units (MRAMs). The sample structure, which simulated an MRAM free layer, is Si-sub./SiO2/Ni-Fe(tnm)/CL (7 nm; CL=Ru, Ta). The Ni-Fe thin films less than 3 nm thick show low coercive fields of less than 1 Oe because of employment of the Ru capping layer. Moreover, from evaluation of the magnetization of the Ni-Fe films, we found that the Ru capping layer results in less dead-layer formation in comparison with a conventional Ta capping layer. The Ru capping layer is valuable for MRAM use in terms of low coercive magnetic field and effective thickness control.

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© 2005 (社)日本応用磁気学会
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