日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
論文
L21構造を持つCo2CrGa フルホイスラー合金薄膜の作製とそれを用いた強磁性トンネル接合素子のトンネル磁気抵抗
正木 達章菊地 麻樹手束 展規杉本 諭猪俣 浩一郎貝沼 亮介石田 清仁
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ジャーナル オープンアクセス

2006 年 30 巻 4 号 p. 455-458

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We have investigated that the structural and magnetic properties of Co2CrGa full-Heusler alloy films and researched the tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co2CrGa electrode on a MgO(100) substrate. Co2CrGa films were fabricated with substrate heating (RT ≤ Ts ≤ 500°C) or post-annealing (RT ≤ Ta ≤ 500°C) after the deposition using an ultrahigh vacuum dc magnetron sputtering system. L21-ordered Co2CrGa thin films were obtained at Ts ≥ 300°C or Ta ≥ 200°C. The maximum magnetic moment per formula unit measured at 5 K were 2.8 μB and 2.6 μB for TS and Ta = 400°C, respectively, which are over 85% of the theoretical value. The maximum TMR of 18% at RT and 42% at 5 K are obtained for the MTJ using the L21-structured Co2CrGa film as a bottom electrode. It is expected that the TMR can be enhanced by optimizing the interface of Co2CrGa/AlOx.

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© 2006 (社)日本応用磁気学会
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