Galvanomagnetic Effect in Tri-layered Py/Cu/Py Ring Structures

Abstract

Magnetization reversal in nano-structured Py/Cu/Py rings was investigated in terms of the giant magnetoresistance effect (GMR). The magnetization reversal was well regulated when a magnetic field was applied parallel to the arm axis, and the GMR effect reached about 1.5%. When the external magnetic field was tilted from the arm-plane, pinning (or depinning) of the domain wall was observed in both wire and rings. This demonstrates that the GMR of a tri-layered structure is sufficiently sensitive to detect pinning (or deppining) of domain-wall motion in a nano-scaled ring, indicating that the present ring system is promising as a means for measuring the interference of electron motion affected by inhomogeneous magnetization distribution.