日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
論文
Co2MnSiを用いた強磁性トンネル接合における極高スピン分極率の実現
桜庭 裕弥服部 正志大兼 幹彦久保田 均安藤 康夫佐久間 昭正N. D. TellingP. KeatleyG. van der LaanE. ArenholzR. J. Hicken宮崎 照宣
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ジャーナル オープンアクセス

2007 年 31 巻 4 号 p. 338-343

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We fabricated Co2MnSi/(Mg)/Al-O/CoFe MTJs using UHV magnetron sputtering. The interfacial chemical bond between Co2MnSi and Al-O was intensively optimized by changing plasma oxidation time for Al-O and by inserting a Mg layer. The Mg inserted layer between Co2MnSi and Al-O effectively suppressed the generation of interfacial magnetic impurities. Finally, we successfully observed a giant TMR ratio of 203% at 2 K in the MTJ with a 1.0 nm-Mg layer inserted. The spin-polarization for Co2MnSi estimated from this TMR ratio was 0.97-1.00, which indicated that an almost perfect spin-polarized state was achieved. We also investigated the relationship between the TMR ratio and the site-ordering level of Co2MnSi. As a result, we found that an L21-ordering state is not necessary to achieve high spin-polarization for Co2MnSi in MTJs.

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© 2007 (社)日本応用磁気学会
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