Hall Effect and Thermoelectric Power in Multilayers Prepared on Microstructured Substrate

Abstract

We report the first measurement of Hall effect and thermoelectric power (S) in multilayers prepared on a V-groove microstructured substrate for current-at-an-angle-to-plane (CAP) geometry to extract the contribution from the current-perpendicular-to-plane (CPP) geometry. In the field dependence of extraordinary Hall resistivity (ρ _H^M), we found a clear difference between CAP and current-in-plane (CIP) geometries. In contrast, ρ _H^M values at saturation field are almost the same despite the large difference in the resistivity (ρ ) between the two geometries. From the comparison of the results for two samples with different layer thicknesses, the ratio of the average mean free path of conduction electrons to the layer thickness was found to play an essential role in the scaling relations between ρ _H^M(S) and ρ .