Effects of Uniaxial Stress on the Electrical Properties in CdS Single Crystals

Abstract

Measurements of the conductivity and the Hall effect in high conductivity CdS crystals have been made at liquid nitrogen temperature, under the compressional uniaxial stress applied parallel or perpendicular to the c-axis. It has been found that the change in the conductivity induced by the applied stress is substantially due to the change in the electron mobility. The mobility decreases with increasing the stress when the mobility under zero stress is near the intrinsic mobility, while the mobility increases with the stress when the mobility under zero stress is smaller than the intrinsic mobility. This behavior is explained in terms of the negative stress coefficient of the intrinsic mobility, (−2.9±0.5)×10⁻¹¹dyn⁻¹cm² and the positive coefficient of the extrinsic mobility, (2.7±0.3)×10⁻¹⁰dyn⁻¹cm².