Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Scattering Anisotropy of Conduction Electrons Due to Vacancies in High-Purity Monocrystalline Aluminium
Yoshitake UedaHiroki HosodaTakao Kino
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1988 Volume 57 Issue 11 Pages 3896-3902

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Abstract
The low-field Hall coefficient RH0 and transverse magnetoresistance coefficient Pt0 have been measured in a monocrystalline specimen of zone-refined aluminium quenched from 553 and 573 K. The measurements have been made at 4.2 K with asuperconducting chopper amplifier with a sensitivity better than 5 pV. For vacancies as scattering centres in aluminium, the low-field coefficients have been obtained as RH0=−2.02×10−11 m3·C−1 and Pt0=0.45×10−19 Ω2·m2·T−2. These data are analysed according to the three-group model of Kesternich [W. Kesternich: Phys. Rev. B13 (1976) 4227]. The scattering anisotropy due to a vacancy is similar to that due to Mn, Zn and Ag atoms, but different from that due to Li, Mg and Si atoms. It is concluded that the scattering potential of a vacancy strongly extends into the interstitial region.
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