The 62nd JSAP Spring Meeting 2015
Session ID : 13p-P17-17
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Spring Meeting
Number : 62
Location : [in Japanese]
Date : March 11, 2015 - March 14, 2015
MOS characteristics of SiO2 deposited by plasma CVD on n-GaN substrate
*Katsunori Ueno, Shinya Takashima, Hideaki Matsuyama, Masaharu Edo, Kiyokazu Nakagawa
Author information
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Article 1st page
