JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 80th JSAP Autumn Meeting 2019
Session ID : 19a-E301-6
Conference information

Improvement of breakdown voltage of GaN-on-GaN p-n Junction Diodes with Shallow Bevel Termination for High Power Applications
*MACIEJ FRANCISZEK MATYSTakashi IshidaTetsu Kachi
Author information
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Article 1st page
Content from these authors
© 2019 The Japan Society of Applied Physics
Previous article Next article
feedback
Top