高圧力の科学と技術
Online ISSN : 1348-1940
Print ISSN : 0917-639X
ISSN-L : 0917-639X
The Pressure Approach to the Origin of the Anomalous State in the Quasi-Two-Dimensional Organic Conductor α- (BERT-TTF) 2KHg (SCN) 4
N. HanasakiS. KagoshimaN. MiuraG. Saito
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ジャーナル フリー

1998 年 7 巻 p. 520-522

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抄録
Quasi-two-dimensional conductor α- (BEDT-TTF) 2KHg (SCN) 4 has the so-called anomalous electronic state at low temperature, while the isostructural salt α- (BEDT-TTF) 2NH4Hg (SCN) 4 shows a normal behavior. In order to investigate the anomalous state by pressure approach, we measured the angular dependence of magnetoresistance under pressure to probe the Fermi surface topology. In α- (BEDT-TTF) 2KHg (SCN) 4, pressure suppresses the anomalous state and resurrects the normal one. Above the critical pressure, we found a quasi-one-dimensional Fermi surface responsible for the anomalous state. A detailed analysis of the pressure dependence of magnetoresistance shows that pressurization enhances the warp of the planar Fermi surface. In α- (BEDT-TTF) 2NH4Hg (SCN) 4, the higher harmonic components of the warping was found to be comparatively large.
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© The Japan Society of High Pressure Science and Technology
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