JSME International Journal Series A Solid Mechanics and Material Engineering
Online ISSN : 1347-5363
Print ISSN : 1344-7912
ISSN-L : 1344-7912
Dislocation Density Analyses of Bulk Semiconductor Single Crystal during CZ Growth Process : Effects of Crystal Anisotropy
Noriyuki MIYAZAKIYasuko KURODA
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1999 Volume 42 Issue 4 Pages 485-491

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Abstract

A computer code was developed for simulation of dislocation density in a bulk single crystal during the Czochralski(CZ) growth process. In this computer code, the effects of crystal anisotropy such as the elastic constants and slip directions were approximately taken into account by averaging the Young's modulus, the Poisson's ratio and the resolved shear stress along the azimuthal direction. Axisymmetric finite element analysis can be applied to quantitative estimation of dislocation density during single crystal growth process by using such averaging technique together with the Hassen-Sumino model as a creep constitutive equation of a single crystal at elevated temperatures. Dislocation density analyses were performed for both the[001]and [111]growth directions of an InP single crystal. As a result, although the[111]growth direction has the larger average Young's modulus than the[001]growth direction, the former gives lower dislocation density than the latter.

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