抄録
Direct silicon bonded (DSB) substrates with (110)/(100) hybrid orientation technology are attracting considerable attention as a promising technology for high performance bulk CMOS technology. We have investigated the structure of the (110)/(100) interface parallelling each <110> direction (DSB interface) by first-principles calculation. The our calculation showed that (i) Si atoms in the DSB interface formed covalent bonding, (ii) the dangling bonds in Si (110) and (100) surfaces disappeared due to restructuring in the DSB interface. Moreover, the calculated interfacial structure corresponds to the reported TEM observation.
