半導体パッケージ構造中の再配線 / 絶縁膜界面の熱疲労信頼性におよぼす絶縁膜材料の影響

抄録

The results obtained from cyclic peel tests conducted at the PH/Cu interface indicated that, similar to the PI/Cu interface, a Paris law was observed between the fatigue crack growth rate and the energy release rate range. Additionally, a threshold energy release rate range ΔGi_th was identified. Comparing the resistance to crack propagation at the PH/Cu interface with that at the PI/Cu interface, it was observed that crack growth at the PH/Cu interface was significantly faster, and the ΔGi_th value was only half of that observed at the PI/Cu interface. This showed that the PH/Cu interface is weaker in terms of crack propagation compared to the PI/Cu interface. FEM using a simplified three-dimensional structure of a semiconductor package revealed that interface cracks did not propagate from initial defects in either dielectric film under a temperature cycling. However, it was confirmed that PI is superior to PH as an interlayer dielectric with fewer delamination concerns.