Abstract
As for the ball semiconductor, the application to the micromachine is expected in the future. This paper discribes the result of micro structure fablication in spherical single-crystal silicon by anisotropic etching. We propose the selection indicator in the crystal orientation for the micro etching structure fabrication in the ball semiconductor. For instance, when we take the priority to high efficiency as the micro structure design factor, the <110> directions are selected because the etching rate in depth direction is large, and the side etching rate is small.