抄録
Silicon dry etching technology makes it possible to fabricate rectangular structures by repeating two steps of etching process and protection process. Therefore, our research introduces the ability of Si dry etching technology in order to fabricate un-tapered, high precision microstructures containing rectangular grating patterns with narrow pitch of submicron level. In the present study, a high precision Si microstructure was fabricated using ICP-RIE apparatus. In these techniques, we have succeeded in fabricating about 40 μrn height, void-free gold microstructures in a space as narrow as 2.6 μm in large effective area of 60 mm squares. In this research, we are trying narrower space and high aspect ratio microstructures. Therefore, it is expected to be used in the production of a wide variety of micro-devices that have not yet been put into practice.
