Abstract
It was investigated that the etching characteristics of lead-free (K,Na)Nb03 (KNN) thin films by the ICP-RIE (Inductive Coupled Plasma ・Reactive Ion Etching) with Ar-C4F8 mixture for the reactive gas. The Ar-C4F8 mixing ratio fixed 10:1, and the chamber pressure was 0.5Pa during the etching. The KNN etching depth has linear relationship as the function of the etching time. The etching rate increased with increasing the antenna power and the bias power. The antenna and the bias dependence of the etching rate show good linearity. These linear relationships indicate the good controllability of the etching. The KNN/Pt selectivity increased with increasing antenna power and decreasing bias power. Thus, the high KNN etching rate was obtained at high antenna power and high bias power condition. The high KNN/Pt selectivity was obtained at high antenna power and low bias power condition. The maximum KNN etching rate and KNN/Pt selectivity were 371.6nm/min. and 85.8, respectively. These results are comparable to that of the conventional piezoelectric PZT films.
