Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 30, 2018 - November 01, 2018
It was studied the effect of atomic distance change on the friction force using the MEMS (micro-electromechanical systems) device and AFM (atomic force microscope). We designed micro devices that changes the atomic distance of Si by causing stress concentration. These devices were fabricated on SOI (silicon on insulator) wafer by MEMS technology. The applied voltage of the device was varied, and the friction force of the stress concentration part was measured using AFM. We calculated the changing rate of the friction force. As a result, It was found that the average friction force decreased by 28% at the maximum as the voltage change.
