Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : October 30, 2018 - November 01, 2018
Aluminum (Al)- assisted chemical etching enable us to achieve the high-speed chemical anisotropic etching of silicon dioxide (SiO2). In this study, processing characteristics on Al-assisted chemical etching were evaluated. As a result, chemical vapor etching with Al (Al : O = 1 : 0.0038) was 16.9 times faster than it without Al. In addition, we evaluated the relationship between oxygen content and etching speed. Chemical vapor etching using aluminum which had high purity was faster. Furthermore, we demonstrated by fabrications of some nanostructure such as bull's eye nanostructure and nanotrench structure, that Al-assisted chemical vapor etching is a powerful technique for nanofabrication.
