抄録
Thin film shape memory materials including shape memory alloys (SMAs) are promising smart materials for MEMS actuators because of its large recovery stress and strain. For development of novel SMAs, combinatorial approach is focused on. However, the approach requires high-throughput characterization method of thin film SMAs. In this paper, we proposed novel measurement method of phase transformation temperatures of SMAs for combinatorial approach, which means applicable method to integrated thin film samples. The method use thermography and detect two-way transformation as emissivity change. The proposed method is demonstrated on Ti-Pd-Ni SMA sample which is heated and then cooled in vacuum furnace, and as results, clear changes of emissivity can be detected in both cases. The results are then compared with electrical resistivity change and results of differential scanning calorimetry (DSC). It is then turned out that the detected temperatures of emissivity change correspond with the conventional transformation temperatures. The result of this paper is precursor to achieve the high-throughput characterization of transformation temperatures of thin film SMAs.
