光照射電着法によるn型窒化ガリウム上の酸化亜鉛の厚膜成長

抄録

Zinc oxide (ZnO) thick film growth on n-type gallium nitride (n-GaN) using an electrodeposition was investigated. We supplied electrons to the surface by light excitation using a Xe lamp for a long continuous electrochemical deposition. By using this technique, stable electrochemical reactions for 20h and 120h were realized. The sample grown for 20h had a thickness of 26μm, an averaged optical transmission of 85% in the visible-light region, and no obvious grain boundary from its cross-sectional SEM image. On the other hand, the sample grown for 120h had a thickness of 140μm, an averaged optical transmission of 25%, and many grain boundaries. Optimization of growth conditions for the thickness of above 30∼40μm is necessary.