単結晶Siの破壊じん性

抄録

Fracture toughness (K_IC) values were measured on the major planes of single-crystal silicon using the controlled surface flaw (CSF) and indentation fracture (IF) methods at room temperature. The values of K_IC on the surface orientations {100}, {110}, {111} and {112} obtained by the CSF method were found to be 1.13, 1.12-1.14, 1.18 and 1.11-1.18MPa·m^0.5, respectively. It was found that these K_IC values increased slightly with increasing the Young's modulus perpendicular to the fracture surfaces. Though K_IC values obtained by the IF method, on the other hand, were scattered significantly (0.82-1.18MPa·m^0.5), its Young's modulus dependence was similar to that obtained by CSF method.