材料
Online ISSN : 1880-7488
Print ISSN : 0514-5163
ISSN-L : 0514-5163
プレーナマグネトロンスパッタリング生成によるAlN膜の結晶配向性と残留応力のプラズマ汚染の影響
日下 一也英 崇夫富永 喜久雄
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1994 年 43 巻 490 号 p. 799-805

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Crystal orientation and residual stress development in AlN films deposited on BLC glass (Borosilicate glass; the thermal expansion coefficient of which is nearly equal to that of AlN) substrate were investigated by an X-ray diffraction. Deposition was made by a conventional planar magnetron sputtering system under the nitrogen gas pressure of 0.65Pa at the substrate temperature between 423K and 523K. In order to investigate the effect of plasma contamination, the distance between the target and the substrate holder (target distance dT) was chosen at 30mm and 60mm.
The intensity of 00·2 diffraction showed that the c-axis orientation of AlN films was improved by the deposition with a short target distance (dT=30mm). However, in all the AlN films deposited with dT=30mm, fine cracks were observed probably due to the effect of plasma contamination. In the films deposited with a long target distance (dT=60mm), large tensile residual stress greater than 1GPa was found at every substrate temperature used in the present investigation. In the films deposited with dT=30mm, tensile residual stress became larger with increasing substrate temperature. As compared with the AlN films deposited with dT=60mm, the tensile residual stress in AlN films deposited with dT=30mm considerably decreased because of the effect of ion bombardment.

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