アーク・イオンプレーティング法によるTiN皮膜の結晶状態に対する成膜条件の影響
2001 年 50 巻 7 号 p. 707-712
詳細
2001 年 50 巻 7 号 p. 707-712
Relationship between the structure and the depositing conditions of TiN film deposited by arc ion plating were investigated by X-ray diffraction. Bias voltage and arc current were changed to examine their roles on the structure of TiN films. The structure of TiN film depended on the bias voltage. In the case of a bias voltage at 0V, the TiN films exhibited high {110} orientation, whereas the films exhibited high {111} orientation when the bias voltage was-100V. On the other hand, arc current did not affect the structure of TiN films. {111} orientation was accomplished on the glass substrate when the effect of droplets was reduced.
The ratio of nitrogen to titanium composition (N/Ti) was observed by X-ray photoelectron spectroscopy (XPS). The results of XPS analysis showed that the maximum value of N/Ti was about 0.89 in the TiN films when they had {110} and {111} preferred orientation along the film surface.
