2002 年 51 巻 10 号 p. 1160-1163
Under atmospheric pressure, homogenous nonequilibrium low temperature plasma was generated by an rf (13.56MHz) excitation of He gas. By using this cold plasma, ZnO films were deposited on glass substrates exposed to air at a room temperature Bis-Dipivaloylmethanato Zinc ((C11H19O2)2) was supplied into the plasma with carrier He gas. Thickness and electrical resistivity of the films were then measured. Dependence of rf power and anode-cathode gap on thickness and the electrical resistivity was investigated. In addition, microstructure of the films was studied by FE-SEM observation.