大気圧プラズマCVD法によるSiN_xの成膜特性

抄録

Silicon nitride (SiN_x) films were fabricated with extremely high deposition rate using the atmospheric pressure plasma CVD technique. The films were prepared on Si(001) wafers at atmospheric pressure in a very high frequency (150MHz) plasma of gas mixtures containing He, H₂, SiH₄ and N₂ or NH₃. Film properties (structure and composition of SiN_x) were studied as a function of each deposition parameter by Fourier transformation infrared (FTIR) absorption spectroscopy and Auger electron spectroscopy. The maximum deposition rate was 120nm/s, which was 40 times as fast as that achieved by the conventional plasma CVD technique. It was found that SiN_x films with uniform structure could be deposited using NH₃ as the N source gas. When N₂ was used, however, the composition of the film changed in the normal direction of the surface.