The prevention of residual stress of thin film syntheses is very important in processing engineering surfaces. In this paper, details of residual stress control by the vibration of the substrate using PZT at frequency of 102-106Hz and voltage of 0-100V are presented. The thin films deposited are crystalline TiN, Ti, Cu, Al films and amorphous C, Si films. The residual stresses are measured using Stoney's method. The results of our experiment show that for Ti, TiN and Cu thin films, compressive stress are changed to tensile stresses while the Al films show only a decrement of the compressive stresses. The amorphous thin films on the other hand did not show any change in the residual stress. XRD and Auger spectroscopy results verify that the composition and crystalline structure of the treated and untreated crystalline thin films to be the same. But it is shown that grain size in the film tend to decrease with increasing the vibration amplitude. From this microstructure change of the film, a model for the control of residual stress is proposed.