希薄NaCl電解還元水を用いたシリコンウエハの精密研磨

抄録

This paper describe precision polishing of the silicon wafer using dilute NaCl electrolytically reduced water, instead of conventional polishing with slurry which is environmental load increase and cost overrun. First, by the comparative experiment about the etching operation of electrolytically reduced water, NaOH solution and pure water to the surface of silicon wafer, it clarified the etching performance of electrolytically reduced water. Next, it experimented in the polish about the wafer which has oxide film (SiO₂) and the wafer which removed oxide film (SiO₂) by HF. It clarified the polishing characteristic of silicon wafer when using electrolytically reduced water by the experimental results. Moreover, when using electrolytically reduced water as polish solution, it clarified relation between the removal rate and polishing condition of the silicon wafer. It proved that electrolytically reduced water didn't have a bad influence on the polish pad last. By the result of this research, it proved that dilute NaCl electrolytically reduced water had an enough performance as the polishing solution of the silicon wafer.