抄録
The present paper deals with Photo-CVD combining both monosilane(SiH4) and ozone(O3) under atmospheric pressure. The purpose of this study is to prepare silicon dioxide (SiO2) thin films, which have high transparency and a high deposition rate, without thermal and chemical damage to the substrate. In this paper, characteristics of the SiO2 thin films are experimentally investigated. This paper will conclude that Photo-CVD using ozone as opposed to pure oxygen can improve the deposition rate of SiO2 thin films to 37.6nm/min under the comparatively lower substrate temperature of 147°C. An added benefit is the improvement of the optical and physical property of SiO2 thin films. And the most important parameter to increase the deposition rate is the concentration of ozone. Therefore, further improvement of the deposition rate may be possible by using higher density ozone.
