抄録
Amid growing concerns over energy consumption and environmental sustainability, power semiconductor devices have emerged
as a highly efficient technology for electrical energy conversion. Operating in high-temperature environments （typically between
200 and 300℃）, these devices experience significant thermal stress due to frequent switching operations. To overcome these
challenges, we developed a Cu-SnAgCu （SAC） molded sheet using a high-pressure powder compression method that leverages
the plastic flow of SAC particles. This die attach material is engineered to withstand demanding thermal conditions. This Cu-SAC
molded sheets can be fabricated to a thickness of 40μm without voids. Additionally, the bonded layer maintained its strength after a
1000-hour heat resistance test at 300℃, and no cracks were observed in the SiC die following a －40/+175℃ thermal cycle test for
1000 cycles. Moreover, our results indicate that incorporating a high Cu content in the bonded layer enhances both the coefficient
of thermal expansion and the elastic modulus of conventional Cu3Sn, aligning these properties more closely with those of pure Cu.
Moreover, our results indicate that incorporating a high Cu content in the bonded layer enhances the elastic modulus of conventional
Cu3Sn, aligning these properties more closely with those of pure Cu. These effects and fewer voids are considered that the bonded
layer contributed to the reliability of the joint.
