表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
研究紹介
Ge/Siセグリゲーションの中速イオン散乱による観察
住友 弘二小林 慶裕白石 賢二伊藤 智徳荻野 俊郎
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2001 年 22 巻 3 号 p. 197-202

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The Ge segregation mechanism in the Si/Ge system has been studied by medium-energy ion scattering (MEIS). One monolayer of Ge was grown on Si(001) at 450oC and annealed at 780oC. We find that the Ge redistributes during the very early stages of the annealing process and remains constant even after annealing at longer periods of time. Therefore, we conclude that the top few layers attain thermal equilibrium in a short period of time (less than 1 min). In addition, we find that the activation energy for the site exchange process occurring at the subsurface region is lower than the previously reported value when Si overlayer is grown on the Ge thin film. The exchange between the second and third layers occurs readily during the growth, even though these layers are buried, and are not expected to reduce the surface free energy. The contribution of the second layer to Ge segregation is similar to that of the topmost layer.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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