特集：表面振動分光の最先端
埋め込み金属層基板を用いた赤外反射吸収分光(BML-IRRAS)によるSi表面反応の研究
2003 年 24 巻 5 号 p. 260-267
詳細
2003 年 24 巻 5 号 p. 260-267
In order to obtain the infrared reflection absorption spectroscopy (IRRAS) on semiconductor or insulator surfaces, IRRAS using a buried metal layer substrate (BML) was proposed. Compared with attenuated total reflection (ATR) arrangement, sensitivity is low, but it is a favorable point that sensitivity exists at wide frequency ranges including the finger print regions. The transmission (TR) arrangement is also applicable for wide frequency ranges, but its sensitivity is slightly lower than that of the BML-IRRAS. The important difference between TR and BML-IRRAS is in the selection rule. TR is sensitive for parallel components, but on the other hand, BML-IRRAS is for perpendicular components. Some recent results about the reaction of hydrogen on the Si(100) surfaces and the IR spectra of self assembled alkyl monolayers (SAMs) investigated by BML-IRRAS are introduced.
