表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
研究紹介
レーザアニールによるSi薄膜溶融,結晶化過程の実時間観測と結晶の高品質化
波多野 睦子田井 光春芝 健夫Costas P. GRIGOROPOULOS
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2003 年 24 巻 6 号 p. 375-382

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The liquid-solid interface motion and the temperature history of thin Si films during short pulse (FWHM = 25 ns) excimer laser annealing are observed by in-situ diagnostics. Substantial supercooling (> 200 K) followed by spontaneous nucleation into fine-grained material is observed. Lateral crystal growth is limited by the triggering of spontaneous nucleation in supercooled liquid Si, and the lateral solidification velocity is measured to be about 7.0 m/s. To enhance the lateral growth, the pulse-duration-controlled solid-state laser is utilized. This sequential crystal growth is found to extend over 5 μm in the lateral direction. The validity of the method is confirmed by superior TFT characteristics of high field-effect mobility (n-ch μ > 460 cm2/Vs).

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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