2004 年 25 巻 5 号 p. 296-299
Type of conductively and carrier concentration of a semiconductor sample with three different dopant regions were measured by scanning nonlinear dielectric microscope (SNDM). It is an application of SNDM in to scanning capacitance microscopy with a new detection mechanism that is based on frequency detection. In principle, SNDM includes the SCM function; it is possible to measure not only the conductive type distribution as a conventional SCM, but also the carrier concentration distribution at the same time. As a demonstration, the influence of an adsorbed water layer on the measurements of a semiconductor sample is observed.