We report on the growth of III-V compound semiconductor nanowires by selective-area MOVPE. Position-controlled growth of GaAs nanowire, and InP/InAs/InP core-multi shell nanowires are reviewed. The nanowires are oriented to <111>B or <111>A directions and they have hexagonal cross-section surrounded with {1-10} vertical side facets and (111)B or A top surface. Also, we can control the growth direction to axial or radial by changing the growth parameters. InP/InAs/InP core-multi shell nanowires whose well thickness is of several monolayers are fabricated by using this method. We also review on the growth of vertical GaAs nanowires on Si substrate and fabrication of InGaAs nanowire-FETs.
