2010 年 31 巻 1 号 p. 25-29
Determination method of atomic structures by the reflection high-energy electron diffraction (RHEED) dynamical theory is described for several systems on Si(111) surfaces. A typical determination method is shown for the atomic structure of the Si(111) “1×1” surface at high temperatures. An example of the structural analysis during adsorption or growth process of silicon on the Si(111) surface is also shown and evolutions of silicon atoms on the surface is revealed.