CMOSゲートスタック応用へ向けたGeO₂/Ge 界面反応制御

抄録

This paper discusses the GeO₂/Ge gate stack formation on the basis of the interface reaction control of Ge. The Ge oxidation is quite different from the Si one in terms of the fact that GeO desorption should be taken into account in the oxidation process. By using high-pressure oxidation, GeO desorption is thermodynamically suppressed, resulting that nearly perfect C-V characteristics in MOS capacitors and the record high electron mobility in n-channel MOSFETs have been demonstrated.