抄録
InGaAs MOS gate stack formation and the MOS interface control technologies, which are mandatory for realizing high performance InGaAs MOSFETs, are addressed with an emphasis on our recent achievements. Al2O3/InGaAs MOS gate stacks formed by Atomic Layer Deposition (ALD) are known as one of the most superior InGaAs MOS interfaces. The experimental results of Al2O3/InGaAs, HfO2/InGaAs and HfO2/Al2O3/InGaAs interfaces are presented. It is found that 1-nm-capaciatance equivalent thickness can be realized by HfO2/Al2O3/InGaAs gate stacks. Also, semiconductor inteface buffer layers inserted between InGaAs channels and gate oxides are shown to be effective in further improving the channel mobility.
