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表面科学
Vol. 36 (2015) No. 8 p. 418-423

記事言語:

http://doi.org/10.1380/jsssj.36.418

第34回表面科学学術講演会特集号 [II]

Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The transient variation of electronic temperature, reflecting that of carrier distribution, was successfully defined by spectral fitting, and the observed electronic temperature may indicate the occurrence of cascade carrier multiplication.

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