2015 年 36 巻 9 号 p. 474-479
We have developed a high resolution Raman system attached to an UHV chamber equipped with angle-resolved photoelectron spectroscopy and a manipulator which can apply mechanical strain to sample. The whole system is suitable to evaluate the strain effect on electronic structure. In this paper, we introduce the detail of the system and Raman data of Graphene, sSOI and uniaxially strained Si obtained through the system.