2016 年 37 巻 11 号 p. 527-534
We present a review on the electronic applications of compound materials nanosheets as semiconductor channel materials. Also, we report our results about the device fabrication and characterization of high-k/metal gate MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs). To investigate the scattering mechanism to be responsible for the mobility of MoS2 MOSFETs, the effective mobility has been estimated from the capacitance-voltage and current-voltage characteristics of top-gated MoS2 MOSFET with HfO2/TaN gate. Phonon-limited carrier transport probably limited the mobility of the MoS2 device exhibiting the better mobility. In contrast, the transport characteristics of the MoS2 device exhibiting the lower mobility was dominated by charged impurity scattering in MoS2.
