2017 年 38 巻 5 号 p. 210-215
We introduce a state-of-the-art patterning process developed by new patterning technology using Atomic Layer Deposition (ALD) towards 5/7 nm generation. In the patterning process, critical dimension (CD) shrink technique without CD loading is one of the key requirements. However, in the conventional CD shrink technique, CD loading canʼt be solved in principle. To overcome this issue, by integrating ALD process into the etching flow, we developed a new CD shrink technique without causing CD loading. Furthermore, CD shrink amount can be precisely controlled by the number of ALD cycles while keeping the excellent CD shrink uniformity across a wafer. This is obtained by utilizing a conformal layer with characteristics of ALDʼs self-limiting reaction, which is independent of the pattern variety.