KCl下地の表面構造とSnのエピタキシャル成長
1980 年 1 巻 1 号 p. 53-59
詳細
1980 年 1 巻 1 号 p. 53-59
An attempt was made to correlate the epitaxial growth of Sn with the fine structure of a vacuum-cleaved KCl substrate surface. Deposition was made on the substrate over a wide range of temperatures, and deposits were examined by optical and electron microscopy. One deposit was formed at room temperature, showing the {100} orientation on the overall substrate surface. The second and the third deposits showed the {100} and the {101} orientations on the higher density step and on the flat surface, respectively. The latter is mainly composed of a component whose orientation is rotated by about 3° from the [010] direction of the substrate. This appears with the increase of the substrate temperature. The respective orientations are discussed with the interaction between these deposits and the fine details of the surface structures.
