A FAB Source for SIMS Studies of a Focused FAB Source

Kazutoshi NAGAI

doi:10.1380/jsssj.10.35

分析用高速原子線源

収束性高速原子線源の検討

長井一敏

著者情報

ジャーナルフリー

1989 年 10 巻 1 号 p. 35-39

DOI https://doi.org/10.1380/jsssj.10.35

詳細

発行日: 1989/02/01 受付日: 1988/10/27 J-STAGE公開日: 2009/08/07 受理日: 1988/10/27 早期公開日: - 改訂日: -
訂正情報
訂正日: 2009/08/07 訂正理由: - 訂正箇所: 論文抄録訂正内容: Wrong : A focused fast atom beam source (Focused FAB Source) has been developed by combination of a focused ion source and an ion neutralizer. The source, which consists of a Ga liquid metal ion source, an electro-static lens and a beam scanner, emitts a Ga ion beam of 10 im in the spot size which is measured through observation of absorption current images of a Mo mesh. The focused ion beam, which passes through the low energy electron cloud generated in the ion neutralizer, is changed into a focused atom beam by recombination with electrons. The focused FAB source emitts a Ga atom beam with 7-13 keV of kinetic energy, 30 pA of beam current, and 10 μm of beam diameter. The neutralization coefficient of the ion neutralizer is estimated through intensity ratios for secondary ions by constructing a FAB-SIMS with the focused FAB source and a quadrupole mass spectrometer. It increases with the filament current and bias voltage for the ion neutralizer and saturates at 10%.
Right : A focused fast atom beam source (Focused FAB Source) has been developed by combination of a focused ion source and an ion neutralizer. The source, which consists of a Ga liquid metal ion source, an electro-static lens and a beam scanner, emitts a Ga ion beam of 10 im in the spot size which is measured through observation of absorption current images of a Mo mesh. The focused ion beam, which passes through the low energy electron cloud generated in the ion neutralizer, is changed into a focused atom beam by recombination with electrons. The focused FAB source emitts a Ga atom beam with 7-13 keV of kinetic energy, 30 pA of beam current, and 10 μm of beam diameter. The neutralization coefficient of the ion neutralizer is estimated through intensity ratios for secondary ions by constructing a FAB-SIMS with the focused FAB source and a quadrupole mass spectrometer. It increases with the filament current and bias voltage for the ion neutralizer and saturates at 10%.

抄録

A focused fast atom beam source (Focused FAB Source) has been developed by combination of a focused ion source and an ion neutralizer. The source, which consists of a Ga liquid metal ion source, an electro-static lens and a beam scanner, emitts a Ga ion beam of 10 im in the spot size which is measured through observation of absorption current images of a Mo mesh. The focused ion beam, which passes through the low energy electron cloud generated in the ion neutralizer, is changed into a focused atom beam by recombination with electrons. The focused FAB source emitts a Ga atom beam with 7-13 keV of kinetic energy, 30 pA of beam current, and 10 μm of beam diameter. The neutralization coefficient of the ion neutralizer is estimated through intensity ratios for secondary ions by constructing a FAB-SIMS with the focused FAB source and a quadrupole mass spectrometer. It increases with the filament current and bias voltage for the ion neutralizer and saturates at 10%.

責任著者(Corresponding author)

訂正情報

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