The intensity oscillations of reflection high energy electron diffraction (RHEED) patterns during molecular beam epitaxial (MBE) growth of Zn chalcogenides have been investigated with regard to its dependence on the growth conditions. The stable oscillations in a wide range of substrate temperatures of 200-465°C for ZnSe and 190-420°C for ZnTe and of beam pressure ratios (VI/II) of 0.2-9.2 for ZnSe and 0.2-30.0 for ZnTe, respectively, have been observed. This is the first paper that reports the stable oscillation with more than 150 periods in MBE growth of ZnTe. Furthermore, the oscillation during the sublimation process of ZnTe at higher substrate temperatures above 420°C has been observed, which indicates that layer-by-layer sublimation occurs at this temperature range.
